WMB175DN10LG4-CYG - Multi channel transistors

WMB175DN10LG4-CYG
Description

Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 100V
Drain current 39A
Pulsed drain current 156A
Power dissipation 59.5W
Case PDFN5060-8
Gate-source voltage ±20V
On-state resistance 19.5mΩ
Mounting SMD
Gate charge 22.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat