WMB108N03T1-CYG - SMD N channel transistors

WMB108N03T1-CYG
Description

Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 108A
Pulsed drain current 432A
Power dissipation 69W
Case PDFN5060-8
Gate-source voltage ±20V
On-state resistance 3.7mΩ
Mounting SMD
Gate charge 32nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat