WMB100P03TS-CYG - SMD P channel transistors

WMB100P03TS-CYG
Description

Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -100A
Pulsed drain current -400A
Power dissipation 73.5W
Case PDFN5060-8
Gate-source voltage ±20V
On-state resistance 3.9mΩ
Mounting SMD
Gate charge 134nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat