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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMB099N10HGS-CYG

WMB099N10HGS-CYG - SMD N channel transistors

WMB099N10HGS-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 272A; 96.1W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 43A
Pulsed drain current 272A
Power dissipation 96.1W
Case PDFN5060-8
Gate-source voltage ±20V
On-state resistance 9.9mΩ
Mounting SMD
Gate charge 59nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat