Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMB080N10HG2-CYG

WMB080N10HG2-CYG - SMD N channel transistors

WMB080N10HG2-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 47A
Pulsed drain current 296A
Power dissipation 80.6W
Case PDFN5060-8
Gate-source voltage ±20V
On-state resistance 8mΩ
Mounting SMD
Gate charge 29nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat