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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMB049N12HG2-CYG

WMB049N12HG2-CYG - SMD N channel transistors

WMB049N12HG2-CYG
Description

Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 120V
Drain current 66A
Pulsed drain current 420A
Power dissipation 113.6W
Case PDFN5060-8
Gate-source voltage ±20V
On-state resistance 5mΩ
Mounting SMD
Gate charge 67nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat