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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMB040N08HGS-CYG

WMB040N08HGS-CYG - SMD N channel transistors

WMB040N08HGS-CYG
Description

Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 80V
Drain current 130A
Pulsed drain current 520A
Power dissipation 122.5W
Case PDFN5060-8
Gate-source voltage ±20V
On-state resistance 4mΩ
Mounting SMD
Gate charge 78.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat