WM10P20M2-CYG - SMD P channel transistors

WM10P20M2-CYG
Description

Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -2A
Pulsed drain current -8A
Power dissipation 2.2W
Case SOT23
Gate-source voltage ±20V
On-state resistance 0.31Ω
Mounting SMD
Gate charge 15nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat