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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WM10N35M3-CYG

WM10N35M3-CYG - SMD N channel transistors

WM10N35M3-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 3.5A
Pulsed drain current 14A
Power dissipation 2W
Case SOT23-6
Gate-source voltage ±20V
On-state resistance 0.1Ω
Mounting SMD
Gate charge 21nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat