WM10N02M-CYG - SMD N channel transistors

WM10N02M-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 0.2A
Pulsed drain current 0.8A
Power dissipation 0.35W
Case SOT23
Gate-source voltage ±20V
On-state resistance
Mounting SMD
Gate charge 1.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat