WM10N02G-CYG - SMD N channel transistors

WM10N02G-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 0.2A
Pulsed drain current 0.5A
Power dissipation 0.2W
Case SOT323
Gate-source voltage ±20V
On-state resistance
Mounting SMD
Gate charge 1.5nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat