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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WM06N03GE-CYG

WM06N03GE-CYG - SMD N channel transistors

WM06N03GE-CYG
Description

Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.34A
Pulsed drain current 1.36A
Power dissipation 0.3W
Case SOT323
Gate-source voltage ±20V
On-state resistance 2Ω
Mounting SMD
Gate charge 610pC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat