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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WM03N06M-CYG

WM03N06M-CYG - SMD N channel transistors

WM03N06M-CYG
Description

Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 0.6A
Pulsed drain current 2.4A
Power dissipation 0.35W
Case SOT23
Gate-source voltage ±12V
On-state resistance 0.5Ω
Mounting SMD
Gate charge 0.75nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat