WM03N01G-CYG - SMD N channel transistors

WM03N01G-CYG
Description

Transistor: N-MOSFET; unipolar; 30V; 100mA; Idm: 0.4A; 350mW; SOT323

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 0.1A
Pulsed drain current 0.4A
Power dissipation 0.35W
Case SOT323
Gate-source voltage ±20V
On-state resistance 2.5Ω
Mounting SMD
Gate charge 540pC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat