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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / WM03DN06D-CYG

WM03DN06D-CYG - Multi channel transistors

WM03DN06D-CYG
Description

Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 30V
Drain current 0.6A
Pulsed drain current 1.8A
Power dissipation 0.3W
Case SOT363
Gate-source voltage ±12V
On-state resistance 0.5Ω
Mounting SMD
Gate charge 450pC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat