WM02P26M-CYG - SMD P channel transistors

WM02P26M-CYG
Description

Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -2.6A
Pulsed drain current -10A
Power dissipation 1W
Case SOT23
Gate-source voltage ±8V
On-state resistance 65mΩ
Mounting SMD
Gate charge 4.9nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat