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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / WM02P06G-CYG

WM02P06G-CYG - SMD P channel transistors

WM02P06G-CYG
Description

Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.64A; 200mW

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -660mA
Pulsed drain current -2.64A
Power dissipation 0.2W
Case SOT323
Gate-source voltage ±10V
On-state resistance 0.52Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat