WM02DP06T-CYG - Multi channel transistors

WM02DP06T-CYG
Description

Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET x2
Polarisation unipolar
Drain-source voltage -20V
Drain current -660mA
Pulsed drain current -2.64A
Power dissipation 0.15W
Case SOT563
Gate-source voltage ±12V
On-state resistance 0.52Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat