WM02DN560Q-CYG - Multi channel transistors

WM02DN560Q-CYG
Description

Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 20V
Drain current 56A
Pulsed drain current 100A
Power dissipation 31W
Case DFN3030-8
Gate-source voltage ±12V
On-state resistance 5.4mΩ
Mounting SMD
Gate charge 27.8nC
Kind of package reel
tape
Kind of channel enhancement
Semiconductor structure common drain
Version ESD
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Development and design: Seventh Cat