WM02DN08T-CYG - Multi channel transistors

WM02DN08T-CYG
Description

Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 20V
Drain current 0.8A
Pulsed drain current 3A
Power dissipation 0.27W
Case SOT563
Gate-source voltage ±10V
On-state resistance 0.25Ω
Mounting SMD
Gate charge 1.1nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat