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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / WM02DN085C-CYG

WM02DN085C-CYG - Multi channel transistors

WM02DN085C-CYG
Description

Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 20V
Drain current 8.5A
Pulsed drain current 56A
Power dissipation 1.56W
Case DFN2030-6
Gate-source voltage ±12V
On-state resistance 10.9mΩ
Mounting SMD
Gate charge 22.1nC
Kind of package reel
tape
Kind of channel enhancement
Semiconductor structure common drain
Version ESD
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Development and design: Seventh Cat