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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / WG40N65DFWQ

WG40N65DFWQ - THT IGBT transistors

WG40N65DFWQ
Description

Transistor: IGBT; 650V; 40A; 125W; TO247-3

Specifications
Manufacturer WeEn Semiconductors
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 40A
Power dissipation 125W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 120A
Mounting THT
Gate charge 173nC
Kind of package tube
Turn-on time 95ns
Turn-off time 378ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat