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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / UJ3C065080B3

UJ3C065080B3 - SMD N channel transistors

UJ3C065080B3
Description

Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A

Specifications
Manufacturer Qorvo (UnitedSiC)
Type of transistor N-JFET / N-MOSFET
Technology SiC
Polarisation unipolar
Kind of transistor cascode
Drain-source voltage 650V
Drain current 18.2A
Pulsed drain current 65A
Power dissipation 115W
Case D2PAK
Gate-source voltage ±25V
On-state resistance 80mΩ
Mounting SMD
Gate charge 51nC
Version ESD
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Development and design: Seventh Cat