UCC27200DR - MOSFET/IGBT drivers

UCC27200DR
Description

IC: driver; місток H,півмісток MOSFET; SO8; 3А; Ch: 2; 8÷17ВDC

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of integrated circuit driver
Topology H-bridge
MOSFET half-bridge
Kind of integrated circuit high-/low-side
MOSFET gate driver
Case SO8
Output current 3A
Number of channels 2
Supply voltage 8...17V DC
Integrated circuit features integrated bootstrap functionality
UVLO (UnderVoltage LockOut)
Mounting SMD
Operating temperature -40...140°C
Impulse rise time 600ns
Pulse fall time 600ns
Kind of package reel
tape
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Development and design: Seventh Cat