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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / TSM850N06CX-RFG

TSM850N06CX-RFG - SMD N channel transistors

TSM850N06CX-RFG
Description

Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23

Specifications
Manufacturer TAIWAN SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 2.3A
Power dissipation 0.3W
Case SOT23
Gate-source voltage ±20V
On-state resistance 85mΩ
Mounting SMD
Gate charge 9.5nC
Kind of package tape
Kind of channel enhancement
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Development and design: Seventh Cat