TSM650P03CX-RFG - SMD P channel transistors

TSM650P03CX-RFG
Description

Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23

Specifications
Manufacturer TAIWAN SEMICONDUCTOR
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -2.6A
Power dissipation 1.56W
Case SOT23
Gate-source voltage ±12V
On-state resistance 65mΩ
Mounting SMD
Gate charge 8nC
Kind of package tape
Kind of channel enhancement
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Development and design: Seventh Cat