TSM2323CX-RFG - SMD P channel transistors

TSM2323CX-RFG
Description

Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23

Specifications
Manufacturer TAIWAN SEMICONDUCTOR
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -4.7A
Power dissipation 0.8W
Case SOT23
Gate-source voltage ±8V
On-state resistance 39mΩ
Mounting SMD
Gate charge 19nC
Kind of package tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat