TSM2318CX-RFG - SMD N channel transistors

TSM2318CX-RFG
Description

Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23

Specifications
Manufacturer TAIWAN SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 40V
Drain current 3.9A
Power dissipation 1.25W
Case SOT23
Gate-source voltage ±20V
On-state resistance 45mΩ
Mounting SMD
Gate charge 10nC
Kind of package tape
Kind of channel enhancement
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Development and design: Seventh Cat