TSM2312CX-RFG - SMD N channel transistors

TSM2312CX-RFG
Description

Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23

Specifications
Manufacturer TAIWAN SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 20V
Drain current 4.9A
Power dissipation 0.48W
Case SOT23
Gate-source voltage ±8V
On-state resistance 33mΩ
Mounting SMD
Gate charge 14nC
Kind of package tape
Kind of channel enhancement
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Development and design: Seventh Cat