TSM2309CX-RFG - SMD P channel transistors

TSM2309CX-RFG
Description

Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23

Specifications
Manufacturer TAIWAN SEMICONDUCTOR
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -2A
Power dissipation 1.56W
Case SOT23
Gate-source voltage ±20V
On-state resistance 0.24Ω
Mounting SMD
Gate charge 8.2nC
Kind of package tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat