TSM2307CX-RFG - SMD P channel transistors

TSM2307CX-RFG
Description

Транзистор: P-MOSFET; польовий; -30В; -3А; 800мВт; SOT23

Specifications
Manufacturer TAIWAN SEMICONDUCTOR
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -3A
Power dissipation 0.8W
Case SOT23
Gate-source voltage ±20V
On-state resistance 95mΩ
Mounting SMD
Gate charge 15nC
Kind of package tape
Kind of channel enhancement
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Development and design: Seventh Cat