TSM2306CX-RFG - SMD N channel transistors

TSM2306CX-RFG
Description

Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23

Specifications
Manufacturer TAIWAN SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 3.5A
Power dissipation 0.8W
Case SOT23
Gate-source voltage ±20V
On-state resistance 57mΩ
Mounting SMD
Gate charge 7nC
Kind of package tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat