TPS1120D - Multi channel transistors

TPS1120D
Description

Transistor: P-MOSFET x2; unipolar; -15V; -0.53A; Idm: 7A; SO8; ESD

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor P-MOSFET x2
Polarisation unipolar
Drain-source voltage -15V
Drain current -530mA
Pulsed drain current 7A
Case SO8
Gate-source voltage ±15V
On-state resistance 0.18Ω
Mounting SMD
Gate charge 5.45nC
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat