TPS1100D - SMD P channel transistors

TPS1100D
Description

Transistor: P-MOSFET; unipolar; -15V; -0.72A; Idm: 7A; SO8; ESD

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -15V
Drain current -0.72A
Pulsed drain current 7A
Case SO8
Gate-source voltage ±15V
On-state resistance 0.18Ω
Mounting SMD
Gate charge 5.45nC
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat