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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / TP0610K-T1-GE3

TP0610K-T1-GE3 - SMD P channel transistors

TP0610K-T1-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -0.115A; 0.14W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -60V
Drain current -0.115A
Pulsed drain current -0.8A
Power dissipation 0.14W
Case SOT23
Gate-source voltage ±20V
On-state resistance 9Ω
Mounting SMD
Gate charge 1.7nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat