TK9J90E - THT N channel transistors

TK9J90E
Description

Transistor: N-MOSFET; unipolar; 900V; 9A; 250W; TO3PN

Specifications
Manufacturer TOSHIBA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 900V
Drain current 9A
Power dissipation 250W
Case TO3PN
Gate-source voltage ±30V
On-state resistance 1.3Ω
Mounting THT
Gate charge 46nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat