TK6A80E - THT N channel transistors

TK6A80E
Description

Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 45W; TO220FP

Specifications
Manufacturer TOSHIBA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 800V
Drain current 6A
Pulsed drain current 18A
Power dissipation 45W
Case TO220FP
Gate-source voltage ±30V
On-state resistance 1.35Ω
Mounting THT
Gate charge 32nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat