TK33S10N1L - SMD N channel transistors

TK33S10N1L
Description

Transistor: N-MOSFET; unipolar; 100V; 33A; 125W; DPAK

Specifications
Manufacturer TOSHIBA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 33A
Power dissipation 125W
Case DPAK
Gate-source voltage ±20V
On-state resistance 16.2mΩ
Mounting SMD
Gate charge 33nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat