TK22E10N1 - THT N channel transistors

TK22E10N1
Description

Transistor: N-MOSFET; unipolar; 100V; 22A; 72W; TO220AB

Specifications
Manufacturer TOSHIBA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 22A
Power dissipation 72W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 11.5mΩ
Mounting THT
Gate charge 28nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat