TK100E10N1 - THT N channel transistors

TK100E10N1
Description

Transistor: N-MOSFET; unipolar; 100V; 100A; 255W; TO220AB

Specifications
Manufacturer TOSHIBA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 100A
Power dissipation 255W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 2.8mΩ
Mounting THT
Gate charge 0.14µC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat