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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / SUP85N10-10-GE3

SUP85N10-10-GE3 - THT N channel transistors

SUP85N10-10-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 85A; Idm: 240A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 85A
Pulsed drain current 240A
Power dissipation 250W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 22mΩ
Mounting THT
Gate charge 160nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat