SUP70101EL-GE3 - THT P channel transistors

SUP70101EL-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -100V
Drain current -120A
Pulsed drain current -240A
Power dissipation 375W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 15mΩ
Mounting THT
Gate charge 0.19µC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat