SUP57N20-33 - THT N channel transistors

SUP57N20-33
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 33A; 300W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 33A
Power dissipation 300W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 93mΩ
Mounting THT
Gate charge 130nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat