SUP53P06-20-E3 - THT P channel transistors

SUP53P06-20-E3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -46.8A; 66.7W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -60V
Drain current -46.8A
Power dissipation 66.7W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 25mΩ
Mounting THT
Gate charge 76nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat