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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SUM90N10-8M2P-E3

SUM90N10-8M2P-E3 - SMD N channel transistors

SUM90N10-8M2P-E3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 90A; Idm: 240A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 90A
Pulsed drain current 240A
Power dissipation 300W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 17mΩ
Mounting SMD
Gate charge 150nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat