SUM110P04-05-E3 - SMD P channel transistors

SUM110P04-05-E3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -33A; 375W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -40V
Drain current -33A
Power dissipation 375W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 5mΩ
Mounting SMD
Gate charge 280nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat