SUM110N10-09-E3 - SMD N channel transistors

SUM110N10-09-E3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 87A; 375W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 87A
Power dissipation 375W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 9.5mΩ
Mounting SMD
Gate charge 110nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat