SUM10250E-GE3 - SMD N channel transistors

SUM10250E-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 63.5A; 125W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 250V
Drain current 63.5A
Power dissipation 125W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 31mΩ
Mounting SMD
Gate charge 57.6nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat