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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SUD50P04-08-GE3

SUD50P04-08-GE3 - SMD P channel transistors

SUD50P04-08-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -50A; Idm: -100A

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -40V
Drain current -50A
Pulsed drain current -100A
Power dissipation 73.5W
Case DPAK
TO252
Gate-source voltage ±20V
On-state resistance 8.1mΩ
Mounting SMD
Gate charge 159nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat