SUD50N04-8M8P-4GE3 - SMD N channel transistors

SUD50N04-8M8P-4GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 14A; Idm: 100A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 40V
Drain current 14A
Pulsed drain current 100A
Power dissipation 30.8W
Case DPAK
TO252
Gate-source voltage ±20V
On-state resistance 8.8mΩ
Mounting SMD
Gate charge 56nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat